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s o t 2 2 3 PBSS5360Z 60 v, 3 a pnp low vcesat (biss) transistor 19 february 2014 product data sheet scan or click this qr code to view the latest information for this product 1. general description pnp low v cesat breakthrough in small signal (biss) transistor in a medium power sot223 (sc-73) surface-mounted device (smd) plastic package. npn complement: pbss4360z. 2. features and benefits ? low collector-emitter saturation voltage v cesat ? high collector current capability i c and i cm ? high energy efficiency due to less heat generation ? aec-q101 qualified 3. applications ? dc-to-dc conversion ? supply line switching ? battery charger ? lcd backlighting ? driver in low supply voltage applications (e.g. lamps and leds) ? inductive load driver (e.g. relays, buzzers and motors) 4. quick reference data table 1. quick reference data symbol parameter conditions min typ max unit v ceo collector-emitter voltage open base - - -60 v i c collector current - - -3 a i cm peak collector current t p 1 ms; single pulse - - -6 a r cesat collector-emitter saturation resistance i c = -2 a; i b = -200 ma; pulsed; t p 300 s; 0.02; t amb = 25 c - - 225 m
nxp semiconductors PBSS5360Z 60 v, 3 a pnp low vcesat (biss) transistor PBSS5360Z all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 19 february 2014 2 / 14 5. pinning information table 2. pinning information pin symbol description simplified outline graphic symbol 1 b base 2 c collector 3 e emitter 4 c collector 1 3 2 4 sc-73 (sot223) s y m 0 2 8 2 , 4 3 1 6. ordering information table 3. ordering information package type number name description version PBSS5360Z sc-73 plastic surface-mounted package with increased heatsink; 4 leads sot223 7. marking table 4. marking codes type number marking code PBSS5360Z p5360z 8. limiting values table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cbo collector-base voltage open emitter - -80 v v ceo collector-emitter voltage open base - -60 v v ebo emitter-base voltage open collector - -7 v i c collector current - -3 a i cm peak collector current t p 1 ms; single pulse - -6 a i b base current - -500 ma i bm peak base current t p 1 ms; single pulse - -1 a [1] - 0.65 w [2] - 1 w p tot total power dissipation [3] - 1.35 w
nxp semiconductors PBSS5360Z 60 v, 3 a pnp low vcesat (biss) transistor PBSS5360Z all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 19 february 2014 3 / 14 symbol parameter conditions min max unit [4] - 2 w t j junction temperature - 150 c t amb ambient temperature -55 150 c t stg storage temperature -65 150 c [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . [3] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 6 cm 2 . [4] device mounted on an fr4 pcb, 70 m single-sided copper, tin-plated, mounting pad for collector 6 cm 2 . t amb (c) -75 175 125 2 5 7 5 -25 006aac674 0.5 1.0 1.5 p tot (w) 0.0 (1) (2) (3) (1) fr4 pcb, mounting pad for collector 6 cm 2 (2) fr4 pcb, mounting pad for collector 1 cm 2 (3) fr4 pcb, standard footprint fig. 1. power derating curves
nxp semiconductors PBSS5360Z 60 v, 3 a pnp low vcesat (biss) transistor PBSS5360Z all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 19 february 2014 4 / 14 9. thermal characteristics table 6. thermal characteristics symbol parameter conditions min typ max unit [1] - - 192 k/w [2] - - 125 k/w r th(j-a) thermal resistance from junction to ambient in free air [3] - - 93 k/w r th(j-sp) thermal resistance from junction to solder point - - 16 k/w [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . [3] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 6 cm 2 . aaa-010994 1 0 1 1 0 2 1 0 3 z th(j-a) (k/w) 1 0 - 1 1 0 - 5 1 0 1 0 - 2 1 0 - 4 1 0 2 1 0 - 1 t p (s) 1 0 - 3 1 0 3 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 fr4 pcb, single-sided copper, tin-plated and standard footprint. fig. 2. transient thermal impedance from junction to ambient as a function of pulse duration; typical values
nxp semiconductors PBSS5360Z 60 v, 3 a pnp low vcesat (biss) transistor PBSS5360Z all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 19 february 2014 5 / 14 aaa-010995 1 0 1 1 0 2 1 0 3 z th(j-a) (k/w) 1 0 - 1 1 0 - 5 1 0 1 0 - 2 1 0 - 4 1 0 2 1 0 - 1 t p (s) 1 0 - 3 1 0 3 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . fig. 3. transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-010996 1 0 1 1 0 2 1 0 3 z th(j-a) (k/w) 1 0 - 1 1 0 - 5 1 0 1 0 - 2 1 0 - 4 1 0 2 1 0 - 1 t p (s) 1 0 - 3 1 0 3 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 6 cm 2 . fig. 4. transient thermal impedance from junction to ambient as a function of pulse duration; typical values
nxp semiconductors PBSS5360Z 60 v, 3 a pnp low vcesat (biss) transistor PBSS5360Z all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 19 february 2014 6 / 14 10. characteristics table 7. characteristics symbol parameter conditions min typ max unit v cb = -48 v; i e = 0 a; t amb = 25 c - - -100 na i cbo collector-base cut-off current v cb = -48 v; i e = 0 a; t j = 150 c - - -50 a i ces collector-emitter cut-off current v ce = -48 v; v be = 0 v; t amb = 25 c - - -100 na i ebo emitter-base cut-off current v eb = -5 v; i c = 0 a; t amb = 25 c - - -100 na v ce = -5 v; i c = -50 ma; t amb = 25 c 150 - - v ce = -5 v; i c = -500 ma; t amb = 25 c 130 - - v ce = -5 v; i c = -1 a; t amb = 25 c 120 - - v ce = -5 v; i c = -2 a; t p 300 s; 0.02; t amb = 25 c; pulsed 100 - - h fe dc current gain v ce = -5 v; i c = -3 a; t p 300 s; 0.02; t amb = 25 c; pulsed 80 - - i c = -500 ma; i b = -50 ma; t amb = 25 c - - -150 mv i c = -1 a; i b = -100 ma; t p 300 s; 0.02; t amb = 25 c; pulsed - - -200 mv i c = -2 a; i b = -200 ma; pulsed; t p 300 s; 0.02; t amb = 25 c - - -450 mv v cesat collector-emitter saturation voltage i c = -3 a; i b = -300 ma; pulsed; t p 300 s; 0.02; t amb = 25 c - - -550 mv r cesat collector-emitter saturation resistance i c = -2 a; i b = -200 ma; pulsed; t p 300 s; 0.02; t amb = 25 c - - 225 m v besat base-emitter saturation voltage i c = -1 a; i b = -100 ma; pulsed; t p 300 s; 0.02; t amb = 25 c - - -1.2 v v beon base-emitter turn-on voltage v ce = -5 v; i c = -1 a; pulsed; t p 300 s; 0.02; t amb = 25 c - - -1.1 v f t transition frequency v ce = -10 v; i c = -50 ma; f = 100 mhz; t amb = 25 c 65 130 - mhz c c collector capacitance v cb = -10 v; i e = 0 a; i e = 0 a; f = 1 mhz; t amb = 25 c - 28 32 pf
nxp semiconductors PBSS5360Z 60 v, 3 a pnp low vcesat (biss) transistor PBSS5360Z all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 19 february 2014 7 / 14 aaa-010997 200 300 100 400 500 h f e 0 i c (ma) -10 - 1 -10 4 -10 3 - 1 -10 2 -10 (1) (2) (3) v ce = ?5 v (1) t amb = 100 c (2) t amb = 25 c (3) t amb = ?55 c fig. 5. dc current gain as a function of collector current; typical values v c e (v) 0 - 5 - 4 - 2 - 3 - 1 aaa-010998 - 1 - 2 - 3 i c (a) 0 i b = - 2 5 m a - 2 2 . 5 - 2 0 - 1 7 . 5 - 1 5 - 1 2 . 5 - 1 0 - 7 . 5 - 2 . 5 - 5 t amb = 25 c fig. 6. collector current as a function of collector- emitter voltage; typical values aaa-010999 -0.4 -0.8 -1.2 v b e (v) 0 i c (ma) -10 - 1 -10 4 -10 3 - 1 -10 2 -10 (1) (2) (3) v ce = ?5 v (1) t amb = ?55 c (2) t amb = 25 c (3) t amb = 100 c fig. 7. base-emitter voltage as a function of collector current; typical values aaa-01 1000 -0.6 -0.8 -0.4 -1.0 -1.2 v besat (v) -0.2 i c (ma) -10 - 1 -10 4 -10 3 - 1 -10 2 -10 (1) (2) (3) i c /i b = 20 (1) t amb = ?55 c (2) t amb = 25 c (3) t amb = 100 c fig. 8. base-emitter saturation voltage as a function of collector current; typical values
nxp semiconductors PBSS5360Z 60 v, 3 a pnp low vcesat (biss) transistor PBSS5360Z all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 19 february 2014 8 / 14 aaa-01 1001 i c (ma) -10 - 1 -10 4 -10 3 - 1 -10 2 -10 -10 - 1 - 1 v cesat (v) -10 - 2 (1) (2) (3) i c /i b = 20 (1) t amb = 100 c (2) t amb = 25 c (3) t amb = ?55 c fig. 9. collector-emitter saturation voltage as a function of collector current; typical values i c (ma) -10 - 1 -10 4 -10 3 - 1 -10 2 -10 aaa-01 1002 1 1 0 - 1 1 0 2 1 0 1 0 3 r cesat () 1 0 - 2 (1) (2) (3) i c /i b = 20 (1) t amb = 100 c (2) t amb = 25 c (3) t amb = ?55 c fig. 10. collector-emitter saturation resistance as a function of collector current; typical values
nxp semiconductors PBSS5360Z 60 v, 3 a pnp low vcesat (biss) transistor PBSS5360Z all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 19 february 2014 9 / 14 11. test information 11.1 quality information this product has been qualified in accordance with the automotive electronics council (aec) standard q101 - stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 12. package outline 0 4 - 1 1 - 1 0 d i m e n s i o n s i n m m 6 . 7 6 . 3 3 . 1 2 . 9 1 . 8 1 . 5 7 . 3 6 . 7 3 . 7 3 . 3 1 . 1 0 . 7 1 3 2 4 4 . 6 2 . 3 0 . 8 0 . 6 0 . 3 2 0 . 2 2 fig. 11. package outline sc-73 (sot223)
nxp semiconductors PBSS5360Z 60 v, 3 a pnp low vcesat (biss) transistor PBSS5360Z all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 19 february 2014 10 / 14 13. soldering s o t 2 2 3 _ f r 1 . 2 ( 4 ) 1 . 2 ( 3 ) 1 . 3 ( 4 ) 1 . 3 ( 3 ) 6 . 1 5 7 3 . 8 5 3 . 6 3 . 5 0 . 3 3 . 9 7 . 6 5 2 . 3 2 . 3 6 . 1 4 2 3 1 s o l d e r l a n d s s o l d e r r e s i s t o c c u p i e d a r e a s o l d e r p a s t e d i m e n s i o n s i n m m fig. 12. reflow soldering footprint for sc-73 (sot223) s o t 2 2 3 _ f w 1 . 9 6 . 7 8 . 9 8 . 7 1 . 9 ( 3 ) 1 . 9 ( 2 ) 1 . 1 6 . 2 2 . 7 2 . 7 2 4 3 1 s o l d e r l a n d s s o l d e r r e s i s t o c c u p i e d a r e a p r e f e r r e d t r a n s p o r t d i r e c t i o n d u r i n g s o l d e r i n g d i m e n s i o n s i n m m fig. 13. wave soldering footprint for sc-73 (sot223)
nxp semiconductors PBSS5360Z 60 v, 3 a pnp low vcesat (biss) transistor PBSS5360Z all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 19 february 2014 11 / 14 14. revision history table 8. revision history data sheet id release date data sheet status change notice supersedes PBSS5360Z v.1 20140219 product data sheet - -
nxp semiconductors PBSS5360Z 60 v, 3 a pnp low vcesat (biss) transistor PBSS5360Z all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 19 february 2014 12 / 14 15. legal information 15.1 data sheet status document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objective specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification. [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest product status information is available on the internet at url http://www.nxp.com . 15.2 definitions preview the document is a preview version only. the document is still subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer, unless nxp semiconductors and customer have explicitly agreed otherwise in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 15.3 disclaimers limited warranty and liability information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use in automotive applications this nxp semiconductors product has been qualified for use in automotive applications. unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customers sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customers applications and products planned, as well as for the planned application and use of customers third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customers applications or products, or the application or use by customers third party customer(s). customer is responsible for doing all necessary testing for the customers applications and products using nxp semiconductors products in order to avoid a default of the applications and the products or of the application or use by customers third party customer(s). nxp does not accept any liability in this respect. limiting values stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customers general terms and conditions with regard to the purchase of nxp semiconductors products by customer.
nxp semiconductors PBSS5360Z 60 v, 3 a pnp low vcesat (biss) transistor PBSS5360Z all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 19 february 2014 13 / 14 no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from competent authorities. translations a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 15.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. adelante , bitport , bitsound , coolflux , coreuse , desfire , ez-hv , fabkey , greenchip , hipersmart , hitag , i2c-bus logo, icode , i-code , itec , labelution , mifare , mifare plus , mifare ultralight , moreuse , qlpak , silicon tuner , siliconmax , smartxa , starplug , topfet , trenchmos , trimedia and ucode are trademarks of nxp b.v. hd radio and hd radio logo are trademarks of ibiquity digital corporation.
nxp semiconductors PBSS5360Z 60 v, 3 a pnp low vcesat (biss) transistor PBSS5360Z all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 19 february 2014 14 / 14 16. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 quick reference data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 pinning information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 8 limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 9 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 10 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 11 test information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 11.1 quality information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 13 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 14 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 15 legal information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 15.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 15.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 15.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 15.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 ? nxp n.v. 2014. all rights reserved for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 19 february 2014

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